The engineered primarily by UBIQ Semiconductor (a subsidiary of uPI Semiconductor) . It handles precise low-voltage, high-current switching tasks. Operating with a 30V drain-source breakdown voltage ( VDScap V sub cap D cap S end-sub
Driven directly from a 3.3V or 5V microcontroller, the M3966M must have ( V_GS(th) ) below 1.5V. A verified unit will fully saturate at 3V logic.
RDS(on)cap R sub cap D cap S open paren o n close paren end-sub : Usually measured in the range of 5.5mΩ to 7mΩ at VGScap V sub cap G cap S end-sub m3966m mosfet verified
| Parameter | Measured | Typical spec | Pass | |-----------|----------|--------------|------| | Ciss (VDS=25V, f=1MHz) | 680 pF | 700 pF | ✓ | | Coss | 150 pF | 160 pF | ✓ | | Crss | 45 pF | 50 pF | ✓ | | Qg (VDD=30V, ID=6A) | 18 nC | 20 nC | ✓ |
Suitable for demanding, high-density power applications. 3. Advantages of Using the M3966M6 The engineered primarily by UBIQ Semiconductor (a subsidiary
: ID = 250 µA, VGS = 0 Result : 64.5 V Spec : ≥60 V → Pass
: Generally manufactured in standard, low-profile QFN-8 or DFN3x3 footprints to aid in high-tier heat dissipation. A verified unit will fully saturate at 3V logic
: Features a high-threshold maximum operating temperature rating of 105°C .
: Controlling the charging and discharging cycles in laptops. Motherboard Repair
Most M3966M in TO-252: